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SKP02N60 SKB02N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
* 75% lower Eoff compared to previous generation combined with low conduction losses * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability * Very soft, fast recovery anti-parallel EmCon diode
C
G
E
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D-PAK) (TO-263AB)
* Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKP02N60 SKB02N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Tj , Tstg -55...+150 C
1)
VCE 600V
IC 2A
VCE(sat) 2.2V
Tj 150C
Package TO-220AB TO-263AB
Ordering Code Q67040-S4214 Q67040-S4215
Symbol VCE IC
Value 600 6.0 2.9
Unit V A
ICpul s IF
12 12
6.0 2.9 IFpul s VGE tSC Ptot 12 20 10 30 V s W
VGE = 15V, VCC 600V, Tj 150C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
SKP02N60 SKB02N60
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB
1)
Symbol
Conditions
Max. Value
Unit
RthJC RthJCD RthJA RthJA TO-220AB TO-263AB
4.2 7 62 40
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 2 A T j =2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 2 .9 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 15 0 A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
2)
Symbol
Conditions
Value min. 600 1.7 1.2 3 Typ. 1.9 2.2 1.4 1.25 4 1.6 142 18 10 14 7 20 max. 2.4 2.7 1.8 1.65 5
Unit
V
A 20 250 100 170 22 12 18 nC nH A nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 2 A V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =2 A V G E = 15 V T O - 22 0A B V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Jul-02
1)
2
SKP02N60 SKB02N60
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =2 5 C , V R = 2 00 V , I F = 2. 9 A , d i F / d t =2 0 0 A/ s 130 12 118 65 1.9 180 nC A A/s ns td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 2 A, V G E = 0/ 15 V , R G = 11 8 , 1) L = 18 0 nH , 1) C = 18 0 pF Energy losses include "tail" and diode reverse recovery. 20 13 259 52 0.036 0.028 0.064 24 16 311 62 0.041 0.036 0.078 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =1 5 0 C V R = 2 00 V , I F = 2. 9 A , d i F / d t =2 0 0 A/ s 150 19 131 150 3.8 200 nC A A/s ns td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 40 0 V, I C = 2 A, V G E = 0/ 15 V , R G = 11 8 , 1) L = 18 0 nH , 1) C = 18 0 pF Energy losses include "tail" and diode reverse recovery. 20 14 287 67 0.054 0.043 0.097 24 17 344 80 0.062 0.056 0.118 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L an d Stray capacity C due to dynamic test circuit in Figure E. 3 Jul-02
SKP02N60 SKB02N60
16A
Ic
14A 12A
10A
t p =2 s
IC, COLLECTOR CURRENT
10A 8A 6A T C =110C 4A 2A 0A 10Hz T C =80C
IC, COLLECTOR CURRENT
15 s 1A 50 s
200 s 0.1A 1ms DC
Ic
0.01A
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 118)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
35W 30W 25W 20W 15W 10W 5W 0W 25C
7A 6A 5A 4A 3A 2A 1A 0A 25C
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
50C
75C
100C
125C
50C
75C
100C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation (IGBT) as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
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Jul-02
SKP02N60 SKB02N60
7A 6A 5A 4A 3A 2A 1A 0A 0V V G E =20V 15V 13V 11V 9V 7V 5V
7A 6A 5A V G E =20V 4A 3A 2A 1A 0A 0V 15V 13V 11V 9V 7V 5V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
1V
2V
3V
4V
5V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
7A 6A
Tj=+25C -55C +150C
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
8A
4.0V
3.5V
IC = 4A
3.0V
IC, COLLECTOR CURRENT
5A 4A 3A 2A 1A 0A 0V
2.5V
IC = 2A
2.0V
1.5V
2V
4V
6V
8V
10V
1.0V
-50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
5
Jul-02
SKP02N60 SKB02N60
t d(off) t d(off)
t, SWITCHING TIMES
tf 100ns
t, SWITCHING TIMES
tf 100ns
td(on)
t d(on)
tr 10ns 0A 1A 2A 3A 4A 5A 10ns 0 100 200 300
tr 400
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 11 8, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 2A, Dynamic test circuit in Figure E)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
t d(off)
5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V -50C 0C 50C 100C 150C
t, SWITCHING TIMES
100ns tf
max.
t d(on)
typ.
tr 10ns 0C 50C 100C 150C
min.
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 2A, RG = 1 1 8, Dynamic test circuit in Figure E)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.15mA)
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Jul-02
SKP02N60 SKB02N60
0.2mJ
*) Eon and Ets include losses due to diode recovery. *) Eon and Ets include losses due to diode recovery.
E, SWITCHING ENERGY LOSSES
E ts *
E, SWITCHING ENERGY LOSSES
0.2mJ
0.1mJ
E ts *
0.1mJ
E on * E off
E on *
E off 0.0mJ 0A 0.0mJ 0
1A
2A
3A
4A
5A
100
200
300
400
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 11 8, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 2A, Dynamic test circuit in Figure E)
0.2mJ
*) Eon and Ets include losses due to diode recovery. D=0.5
ZthJC, TRANSIENT THERMAL IMPEDANCE
E, SWITCHING ENERGY LOSSES
E ts *
10 K/W
0
0.2 0.1 0.05 0.02
R,(K/W) 1.026 1.3 1.69 0.183
R1
0.1mJ
E on *
10 K/W 0.01
-1
E off
, (s) 0.035 3.62*10-3 4.02*10-4 4.21*10-5
R2
10 K/W 1s
-2
single pulse 10s 100s
0.0mJ 0C
C 1 = 1 / R 1 C 2 = 2 /R 2
50C
100C
150C
1m s
10m s 100m s
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 2A, RG = 1 1 8, Dynamic test circuit in Figure E)
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
7
Jul-02
SKP02N60 SKB02N60
25V
20V
VGE, GATE-EMITTER VOLTAGE
C iss 100pF
15V
120V
480V
10V
C, CAPACITANCE
C oss
5V 10pF C rss 0V 0nC 5nC 10nC 15nC 0V 10V 20V 30V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 2A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
25 s
40A
20 s
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
11V 12V 13V 14V 15V
tsc, SHORT CIRCUIT WITHSTAND TIME
30A
15 s
20A
10 s
10A
5 s
0 s 10V
0A 10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE 600V,Tj = 150C)
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Jul-02
SKP02N60 SKB02N60
500ns
280nC
240nC
Qrr, REVERSE RECOVERY CHARGE
400ns
IF = 4A
200nC
trr, REVERSE RECOVERY TIME
300ns
I F = 4A
160nC
I F = 2A I F = 1A
200ns
120nC
IF = 2A I F = 1A
80nC
100ns
40nC
0ns 20A/s
60A/s
100A/s 140A/s 180A/s
0nC 20A/s
60A/s
100A/s 140A/s 180A/s
d i F / d t, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
d i F / d t, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
5A
250A/s
d i r r /d t, DIODE PEAK RATE OF FALL
180A/s
3A
IF = 4A IF = 2A IF = 1A
OF REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT
4A
200A/s
150A/s
2A
100A/s
1A
50A/s
0A 20A/s
60A/s
100A/s
140A/s
0A/s 20A/s
60A/s
100A/s
140A/s
180A/s
d i F / d t, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
9
Jul-02
SKP02N60 SKB02N60
4A
2.5V
3A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
2.0V
I F = 4A
2A
150C 100C 25C -55C
I F = 2A
1.5V
1A
0A 0.0V
0.5V
1.0V
1.5V
2.0V
1.0V
-40C
0C
40C
80C
120C
VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage
Tj, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature
10 K/W
1
ZthJCD, TRANSIENT THERMAL IMPEDANCE
D=0.5
0.2 10 K/W 0.1 0.05 0.02
-1 0
0.01
10 K/W
R,(K/W) 0.830 2.240 3.930
R1
, (s)= 6.40*10-3 8.79*10-4 1.19*10-4
R2
single pulse
C 1 = 1 / R 1 C 2 = 2 /R 2
10 K/W 1s
-2
10s
100s
1ms
10ms 100ms
1s
tp, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = tp / T)
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Jul-02
SKP02N60 SKB02N60
TO-220AB
symbol dimensions
[mm] min max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min
[inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520
A B C D E F G H K L M N P T
9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95
0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374
2.54 typ. 4.30 1.17 2.30 4.50 1.40 2.72
0.1 typ. 0.1693 0.0461 0.0906 0.1772 0.0551 0.1071
TO-263AB (D2Pak)
symbol
dimensions
[mm] min max 10.20 1.30 1.60 1.07 min
[inch] max 0.4016 0.0512 0.0630 0.0421
A B C D E F G H K L M N P Q R S T U V W X Y Z
9.80 0.70 1.00 1.03
0.3858 0.0276 0.0394 0.0406
2.54 typ. 0.65 0.85
0.1 typ. 0.0256 0.0335
5.08 typ. 4.30 1.17 9.05 2.30 4.50 1.37 9.45 2.50
0.2 typ. 0.1693 0.0461 0.3563 0.0906 0.1772 0.0539 0.3720 0.0984
15 typ. 0.00 4.20 0.20 5.20
0.5906 typ. 0.0000 0.1654 0.0079 0.2047
8 max 2.40 0.40 10.80 1.15 6.23 4.60 9.40 16.15 3.00 0.60
8 max 0.0945 0.0157 0.1181 0.0236
0.4252 0.0453 0.2453 0.1811 0.3701 0.6358
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Jul-02
SKP02N60 SKB02N60
i,v diF /dt tr r =tS +tF Qr r =QS +QF tr r IF tS QS tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
2
r2
r1
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH an d Stray capacity C =180pF.
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Jul-02
SKP02N60 SKB02N60
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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Jul-02

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